SPE04M60T-A Datasheet - JILIN SINO

SPE04M60T-A IPM

1 COM GND IC Common Supply Ground 2 VB(U) U Bias Voltage for U-Phase High-Side MOSFET Driving 3 VCC(U) U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) U Signal Input for U-Phase High-Side 5 IN(UL) U Signal Input for U-Phase Low-Side 6 NC No Connection 7 VB(V) .

SPE04M60T-A Features

* ，

* Signal high level valid, 3.3V 5V compatible with 3.3v and MCU 5V MCU

* MOSFET

* Lower arm MOSFET source electrode output

* Built-in bootstrap diode

* Built-in straight through protection

* Built-in undervoltage protection

SPE04M60T-A-JILINSINO.pdf

SPE04M60T-A Datasheet Preview — Preview of SPE04M60T-A PDF

Datasheet Details

Part number:

SPE04M60T-A

Manufacturer:

JILIN SINO

File Size:

803.63 KB

Description:

Ipm.

📁 Related Datasheet

SPE04M60T-C IPM (JILIN SINO)

SPE04M50T-A Intelligent Power Module (SPE)

SPE02M50T-A Intelligent Power Module (JILIN SINO)

SPE02M50T-A Intelligent Power Module (SPE)

SPE02M50T-C Intelligent Power Module (JILIN SINO)

SPE0311 Single-Line ESD Protection Array (SYNC POWER)

SPE0332 2-Line ESD Protection Array (SYNC POWER)

SPE0504 4-Line ESD Protection Array (SYNC POWER)

TAGS

SPE04M60T-A SPE04M60T-A IPM JILIN SINO

SPE04M60T-A Distributor