SPE04M60T-A - IPM

Product Overview

JILIN SINO

Datasheet Details

Part number	SPE04M60T-A
Manufacturer	JILIN SINO
File Size	803.63 KB
Description	IPM
Datasheet	SPE04M60T-A Datasheet
Additional preview pages of the SPE04M60T-A datasheet.

Product details

Description

1 COM GND IC Common Supply Ground 2 VB(U) U Bias Voltage for U-Phase High-Side MOSFET Driving 3 VCC(U) U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) U Signal Input for U-Phase High-Side 5 IN(UL) U Signal Input for U-Phase Low-Side 6 NC No Connection 7 VB(V) V Bias Voltage for V-Phase High Side MOSFET Driving 8 VCC(V) V Bias Voltage for V-Phase IC and Low Side MOSFET Driving 9 IN(VH) V Signal Input for V-Phase High-Side 10 IN(VL) V Signal Input

Features

，.
Signal high level valid, 3.3V 5V compatible with 3.3v and MCU 5V MCU.
MOSFET.
Lower arm MOSFET source electrode output.
Built-in bootstrap diode.
Built-in straight through protection.
Built-in undervoltage protection.
Internal integrated temperature detection output.
1500V.
Resistant to high voltage 1500V SOP23-FP PIN1-PIN23 ORDER.

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Published: Aug 29, 2024 |