SPE04M60T-A Datasheet (JILIN SINO)

SPE04M60T-A, IPM

1 COM GND IC Common Supply Ground 2 VB(U) U Bias Voltage for U-Phase High-Side MOSFET Driving 3 VCC(U) U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) U Signal Input for U-Phase High-Side 5 IN(UL) U Signal Input for U-Phase Low-Side 6 NC No Connection 7 VB(V)

SPE04M60T-A Features

* ，

* Signal high level valid, 3.3V 5V compatible with 3.3v and MCU 5V MCU

* MOSFET

* Lower arm MOSFET source electrode output

* Built-in bootstrap diode

* Built-in straight through protection

* Built-in undervoltage protection