* z Low frequency power amplifier z Complementary pair with 2SB647/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage
2SD667
Jiangsu Changjiang Electronics
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Npn transistor.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SD667,2SD667A
TO-92MOD
1. EMITTER 2.
📁 Related Datasheet
2SD661 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.
2SD661 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.
2SD661A - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: .
2SD661A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: .
2SD662 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
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2SD662 - Silicon NPN Transistor
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Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
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2SD662B - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2..
2SD662B - Silicon NPN Transistor
(Panasonic Semiconductor)
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Transistors
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Silicon NPN epitaxial planar type
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