2SD2150 Datasheet, Transistor, Jiangsu Changjiang Electronics

PDF File Details

Part number:

2SD2150

Manufacturer:

Jiangsu Changjiang Electronics

File Size:

76.64kb

Download:

📄 Datasheet

Description:

Npn transistor.

TAGS

2SD2150

Jiangsu Changjiang Electronics

📁 Related Datasheet

2SD2150 - Transistor (Rohm)
Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain character.

2SD2150 - NPN Transistor (HOTTECH)
Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for I.

2SD2150 - Low Frequency Transistor (GME)
Production specification LOW FREQUENCY TRANSISTER（20V，3A） FEATURES z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). z Excellent current gain ch.

2SD2150 - NPN Transistor (Weitron Technology)
.DataSheet.co.kr 2SD2150 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATIN.

2SD2150 - Low Frequency Transistor (Guangdong Kexin Industrial)
.DataSheet.co.kr SMD Type Low Frequency Transistor 2SD2150 Transistors SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +.

2SD2150 - NPN Transistor (SeCoS)
Elektronische Bauelemente 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.

2SD2150-HF - NPN Transistors (Kexin)
SMD Type NPN Transistors 2SD2150-HF Transistors ■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) .

2SD2151 - Silicon NPN Transistor (Panasonic Semiconductor)
Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit: mm 0.7±0.1 s Features q q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0..

2SD2151 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2151 .. DESCRIPTION ·With TO-220Fa package ·Low co.

2SD2151 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A ·Collector-Emitter Breakdown Voltage- : V.