* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3400 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 RE
AO3400
JinYu
1.81 MB
30v n-channel mosfet.
30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ.
📁 Related Datasheet
AO3400 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
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AO3400A 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
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