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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
VR 80
IF 100
IFSM
1
PD 225*
Tj 150
Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V mA A mW
BAV99C
SILICON EPITAXIAL PLANAR DIODE
A G
D
C N K J
E L BL
23 1
M 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
3
21
SOT-23(1)
Marking
Type Name
H8C
Lot No.
BAV99C Datasheet
