Part number:
KDS120E
Manufacturer:
KEC
File Size:
348.64 KB
Description:
Schottky barrier type diode.
* Small Package : ESM. Low Forward Voltage : VF=0.92V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward C
KDS120E
KEC
348.64 KB
Schottky barrier type diode.
📁 Related Datasheet
KDS120 - SILICON EPITAXIAL TYPE DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌSmall Package
: USM.
ᴌLow Forward Voltage
: VF=0.92V (Typ.).
ᴌFa.
KDS120V - SCHOTTKY BARRIER TYPE DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Very Small Package
: VSM.
Low Forward Voltage
: VF=0.92V (Typ.).
.
KDS121 - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: USM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast R.
KDS121E - SILICON EPITAXIAL PLANAR DIODE
(KEC)
..
SEMICONDUCTOR
TECHNICAL DATA
KDS121E
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small P.
KDS121V - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Very Small Package
: VSM.
Low Forward Voltage
: VF=0.9V (Typ.).
F.
KDS122 - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: USM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast R.
KDS123E - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance U.
KDS123S - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance U.