Part number:
KDS121V
Manufacturer:
KEC
File Size:
350.51 KB
Description:
Silicon epitaxial planar diode.
* Very Small Package : VSM. Low Forward Voltage : VF=0.9V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forwa
KDS121V
KEC
350.51 KB
Silicon epitaxial planar diode.
📁 Related Datasheet
KDS121 - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: USM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast R.
KDS121E - SILICON EPITAXIAL PLANAR DIODE
(KEC)
..
SEMICONDUCTOR
TECHNICAL DATA
KDS121E
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small P.
KDS120 - SILICON EPITAXIAL TYPE DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌSmall Package
: USM.
ᴌLow Forward Voltage
: VF=0.92V (Typ.).
ᴌFa.
KDS120E - SCHOTTKY BARRIER TYPE DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.92V (Typ.).
Fast .
KDS120V - SCHOTTKY BARRIER TYPE DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Very Small Package
: VSM.
Low Forward Voltage
: VF=0.92V (Typ.).
.
KDS122 - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: USM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast R.
KDS123E - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance U.
KDS123S - SILICON EPITAXIAL PLANAR DIODE
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance U.