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KDS3601 - 100V Dual N-Channel PowerTrench MOSFET

KDS3601 Description

www.DataSheet4U.com SMD Type 100V Dual N-Channel PowerTrench MOSFET KDS3601 IC IC .

KDS3601 Features

* 1.3 A, 100 V. RDS(ON) = 480m RDS(ON) = 530m @ VGS = 10 V @ VGS = 6 V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate

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Datasheet Details

Part number
KDS3601
Manufacturer
Guangdong Kexin Industrial
File Size
93.10 KB
Datasheet
KDS3601_GuangdongKexinIndustrial.pdf
Description
100V Dual N-Channel PowerTrench MOSFET

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100V Dual N-Channel PowerTrench MOSFET Guangdong Kexin Industrial
Guangdong Kexin Industrial KDS3601-like datasheet