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KDS112

SILICON EPITAXIAL TYPE DIODE

KDS112 Features

* Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS112 S

KDS112 Datasheet (27.39 KB)

Preview of KDS112 PDF

Datasheet Details

Part number:

KDS112

Manufacturer:

KEC

File Size:

27.39 KB

Description:

Silicon epitaxial type diode.

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KDS112 SILICON EPITAXIAL TYPE DIODE KEC

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