KDS114E - SILICON EPITAXIAL PLANAR DIODE
KDS114E Features
* Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 35 100 150 -55 150 UNIT V mA KDS114E SILICON EPI
