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KDS3912

100V Dual N-Channel PowerTrench MOSFET

KDS3912 Features

* 3 A, 100 V. RDS(ON) = 125m RDS(ON) = 135m Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability @ VGS = 10 V @ VGS = 6 V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to

KDS3912 Datasheet (93.45 KB)

Preview of KDS3912 PDF

Datasheet Details

Part number:

KDS3912

Manufacturer:

Guangdong Kexin Industrial

File Size:

93.45 KB

Description:

100v dual n-channel powertrench mosfet.

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KDS3912 100V Dual N-Channel PowerTrench MOSFET Guangdong Kexin Industrial

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