KDS115 - SILICON EPITAXIAL PLANAR DIODE
KDS115 Features
* Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS115 S
