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KDS112E - SILICON EPITAXIAL TYPE DIODE

KDS112E Description

SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS..

KDS112E Features

* Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.6 (Typ. ). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C A G H KDS112E SI

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Datasheet Details

Part number
KDS112E
Manufacturer
KEC
File Size
341.91 KB
Datasheet
KDS112E-KEC.pdf
Description
SILICON EPITAXIAL TYPE DIODE

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SILICON EPITAXIAL TYPE DIODE KEC
KEC KDS112E-like datasheet