KF3N40D N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KF3N40D
Manufacturer: KEC
File Size: 623.07 KB
Datasheet: KF3N40D-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS(Min. )= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ. ) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current @TC=25 @TC=100 ID Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repe

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KF3N40D N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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