KF3N40I Datasheet, Transistor, KEC

KF3N40I Features

• Transistor VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-S

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Part number:

KF3N40I

Manufacturer:

KEC

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📄 Datasheet

Description:

N-channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent a

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KF3N40I

KEC

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