KF3N40I Features
* VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current @TC=25 @TC=100 ID Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repe
Datasheet Details
KF3N40I, KF3N40D
KEC
623.07 KB
N-channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KF3N40I, KF3N40D.
Please refer to the document for exact specifications by model.
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