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KF3N40I, KF3N40D Datasheet - KEC

KF3N40I - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N40I Features

* VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current @TC=25 @TC=100 ID Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repe

KF3N40D-KEC.pdf

This datasheet PDF includes multiple part numbers: KF3N40I, KF3N40D. Please refer to the document for exact specifications by model.
KF3N40I Datasheet Preview Page 2 KF3N40I Datasheet Preview Page 3

Datasheet Details

Part number:

KF3N40I, KF3N40D

Manufacturer:

KEC

File Size:

623.07 KB

Description:

N-channel mos field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: KF3N40I, KF3N40D.
Please refer to the document for exact specifications by model.

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