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KF3N40W

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N40W Features

* VDSS(Min.)= 400V, ID= 2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 400 Gate-Source Voltage VGSS 30 Drain Current @TC=25 @TC=100 2

* ID 1.2

* Pulsed (Note1) Single Pulsed

KF3N40W Datasheet (1.00 MB)

Preview of KF3N40W PDF

Datasheet Details

Part number:

KF3N40W

Manufacturer:

KEC

File Size:

1.00 MB

Description:

N channel mos field effect transistor.

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TAGS

KF3N40W CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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