KF3N50FS - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N50FS Features
* VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50FS) trr(typ) = 300ns (KF3N50FZ) MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1
