KF3N50IZ - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N50IZ Features
* VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V KF3N50DZ/IZ N CHANNEL MOS FIELD EFFECT TRANSISTOR KF3N50DZ A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0.96 M
