KMB060N40BA N-Channel Trench MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KMB060N40BA N-Ch Trench MOSFET General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number: KMB060N40BA
Manufacturer: KEC
File Size: 51.37 KB
Datasheet: KMB060N40BA-KEC.pdf
Description: N-Channel Trench MOSFET

Features

* VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max. ) @ VGS=10V : RDS(ON)=11m (Max. ) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A F J G C B D E H N O M K L DIM MILLIMETERS A 9.95 +_ 0.05 B 9.2+_ 0.1 C 8.00 P D 15.3+_ 0.2 E 4.9

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KMB060N40BA N-Channel Trench MOSFET KEC

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