KP11N60 Features
* hVDSS=600V, ID=11A hDrain-Source ON Resistance : RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.)= 20nC MAXIMUM RATING (Tc=25) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc
Datasheet Details
KP11N60, KP11N60F
KEC
407.51 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: KP11N60, KP11N60F.
Please refer to the document for exact specifications by model.
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