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KP11N60F

N-Channel MOSFET

KP11N60F Features

* VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) R

KP11N60F General Description

A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power su.

KP11N60F Datasheet (407.51 KB)

Preview of KP11N60F PDF

Datasheet Details

Part number:

KP11N60F

Manufacturer:

KEC

File Size:

407.51 KB

Description:

N-channel mosfet.

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KP11N60F N-Channel MOSFET KEC

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