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KP11N60F - N-Channel MOSFET

KP11N60F Description

SEMICONDUCTOR TECHNICAL DATA General .
A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on res.

KP11N60F Features

* VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ. )= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) R

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Datasheet Details

Part number
KP11N60F
Manufacturer
KEC
File Size
407.51 KB
Datasheet
KP11N60F_KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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