Datasheet4U Logo Datasheet4U.com

KP8N60D N-Channel MOSFET

KP8N60D Description

SEMICONDUCTOR TECHNICAL DATA General .
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charac.

KP8N60D Features

* VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ. )= 16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Ener

📥 Download Datasheet

Preview of KP8N60D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
KP8N60D
Manufacturer
KEC
File Size
384.88 KB
Datasheet
KP8N60D-KEC.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • KP800A - Phase Control Thyristor (HUAJING)
  • KP803 - HIGH POWER THYRISTOR (YZPST)
  • KP804 - HIGH POWER THYRISTOR (YZPST)
  • KP807 - HIGH POWER THYRISTOR (YZPST)
  • KP823C03 - SCHOTTKY BARRIER DIODE (Fuji Electric)
  • KP823C04 - SCHOTTKY BARRIER DIODE (Fuji Electric)
  • KP823C09 - SCHOTTKY BARRIER DIODE (Fuji Electric)
  • KP847LT - HIGH POWER THYRISTOR (YZPST)

📌 All Tags

N-Channel MOSFET KEC
KEC KP8N60D-like datasheet