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KP8N60F N-Channel MOSFET

KP8N60F Description

SEMICONDUCTOR TECHNICAL DATA KP8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charac.

KP8N60F Features

* VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ. )= 16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetit

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Datasheet Details

Part number
KP8N60F
Manufacturer
KEC
File Size
381.69 KB
Datasheet
KP8N60F-KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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