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KP8N60I, KP8N60D N-Channel MOSFET

KP8N60I Description

SEMICONDUCTOR TECHNICAL DATA General .
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charac.

KP8N60I Features

* VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ. )= 16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Ener

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This datasheet PDF includes multiple part numbers: KP8N60I, KP8N60D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KP8N60I, KP8N60D
Manufacturer
KEC
File Size
384.88 KB
Datasheet
KP8N60D-KEC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: KP8N60I, KP8N60D.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET KEC
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