KP8N60I
KEC
384.88kb
N-channel mosfet. This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent
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KP8N60D - N-Channel MOSFET
(KEC)
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan.
KP8N60F - N-Channel MOSFET
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SEMICONDUCTOR
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KP8N60F
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General Description
This Super Junction MOSFET has better characteristic.
KP8N60F - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan.
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(KEC)
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan.
KP800A - Phase Control Thyristor
(HUAJING)
## @
0
## 9(## #; 9#( #1
0
k #e$ %& *% + #e$ %& *% 2 2 3 2 4 && 3 2 4 2 5
0 0
' ' (# ) % +, -./k ' ' (# ) % +, -((k
0( 0( 0( 0( ##
.
KP800A - thyristor
(ETC)
：
n n n n n n
KP800A
：
IT(AV) VDRM/VRRM ITSM I2t
800 A 400-1000V 10 KA 500 103A2S
180°, 50Hz , Ths=88°C 180°, 50Hz , Ths=55.
KP803 - HIGH POWER THYRISTOR
(YZPST)
Technical Data
PST KP803
HIGH POWER PHASE CONTROL THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features :
- Blocking Capability up to 1600 V - High dV/dt.
KP804 - HIGH POWER THYRISTOR
(YZPST)
PST KP804
Technical Data
HIGH POWER PHASE CONTROL THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features :
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KP807 - HIGH POWER THYRISTOR
(YZPST)
PST KP807
Technical Data
HIGH POWER PHASE CONTROL THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features :
- Blocking Capability up to 2400 V - High dV/.
