50N06
KIA
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N-channel mosfet. The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state res
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📁 Related Datasheet
50N02-09 - SUB50N02-09
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FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4..
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VDS (V)
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VDS (V)
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50N03 - Power Transistor
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
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1.Features
Advanced trench process technology High density cell design for ultra low on-re.
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DESCRIPTION
The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety.
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Bay Linear
Linear Excellence
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Description
The Bay Linear n-channel power field effect .
50N03LT - PHP50N03LT
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Product specification
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50N04 Datasheet
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0050 at VGS = 10 V 40
0.0065 at VGS = 4.5 V
ID (A)a, c .
