KIA50N03 - N-CHANNEL MOSFET
KIA50N03 Features
* Advanced trench process technology
* High density cell design for ultra low on-resistance
* Fully characterized avalanche voltage and current 2.Applications
* VDSS=30V,RDS(on)=6.5mΩ,ID=50A
* Vds=30V
* RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A
* RDS(ON)=9.5mΩ(Max.),VGS@4.5V,I
