KIA50N06 - N-CHANNEL MOSFET
KIA50N06 Features
* RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datasheet http://www.datasheet4u.com/ KIA 50 Am
