KIA7N60H Datasheet - KIA

KIA7N60H N-CHANNEL MOSFET

This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are we.

KIA7N60H Features

* RDS(on)=1.0Ω @ VGS=10V

* Ultra low gate charge (typical 27nC)

* Low reverse transfer capacitance

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Re

KIA7N60H-KIA.pdf