HL602
KODENSHI KOREA
265.86kb
Infrared emitting diode.
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HL601 - INFRARED EMITTING DIODES
(KODENSHI)
ダイオード INFRARED EMITTING DIODES(GaAlAs)
HL601は、タイプのGaAlAsダイオードです。 The HL601 is a GaAlAs LED with a small and surface mount package.
HL601
FEATURES
●.
HL6111RFNWP5 - 5W WPC Wireless Power Receiver
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HL6111RFNWP5
5W WPC Wireless Power Receiver
Features
◆ Single Chip WPC1.2.4 Wireless Power Receiver for 5W application
◆ Vrect Range: 4-24V Operation.
HL615 - INFRARED EMITTING DIODES
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ダイオード INFRARED EMITTING DIODES(GaAlAs)
HL615
HL615は、レンズきのタイプのGaAlAsダイオードです。
HL615 is a surface mount type GaAlAs infrared emitting diode with resin .
HL63101MG - AlGaInP Laser Diode
(USHIO)
Data Sheet
HL63101MG/102MG
638nm / 7mW AlGaInP Laser Diode
Outline
Internal Circuit
Features
• Optical output power: 5mW(CW) • Visible light output.
HL63102MG - AlGaInP Laser Diode
(USHIO)
Data Sheet
HL63101MG/102MG
638nm / 7mW AlGaInP Laser Diode
Outline
Internal Circuit
Features
• Optical output power: 5mW(CW) • Visible light output.
HL6312G - (HL6312G / HL6313G) AlGaInP Laser Diodes
(Hitachi Semiconductor)
..
HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).
HL6313G - (HL6312G / HL6313G) AlGaInP Laser Diodes
(Hitachi Semiconductor)
..
HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).
HL6314MG - AlGaInP Laser Diode
(Hitachi Semiconductor)
..
HL6314MG
AlGaInP Laser Diode
Description
The HL6314MG is a 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) stru.
HL6323MG - AlGaInP Laser Diode
(Hitachi)
HL6323MG
AlGaInP Laser Diode
ADE-208-1410 (Z) 1st Edition Mar. 2001 Description
The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-.
HL63290HD - AlGaInP Laser Diode
(USHIO)
Data Sheet
HL63290HD
638nm /2.2W (CW) /2.5W (Pulse) AlGaInP Laser Diode
Outline
φ9.0
+0 -0.025
1.0±0.1
+ 0. 1
0.4 -0
(90o)
(0.65)
(0.25) Glass.
