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SMN18T50FD Advanced N-Ch Power MOSFET

SMN18T50FD Description

SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION .

SMN18T50FD Features

* Drain-Source breakdown voltage: BVDSS = 500V
* Low gate charge: Qg=65nC (Typ. )
* Low drain-source On resistance: RDS(on)=0.21Ω (Typ. )
* 100% avalanche tested
* RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-2

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Datasheet Details

Part number
SMN18T50FD
Manufacturer
KODENSHI KOREA
File Size
344.19 KB
Datasheet
SMN18T50FD-KODENSHIKOREA.pdf
Description
Advanced N-Ch Power MOSFET

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Advanced N-Ch Power MOSFET KODENSHI KOREA
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