SNN4010D N-Ch Trench MOSFET

KODENSHI KOREA

SNN4010D Description

SNN4010D N-Ch Trench MOSFET Power Switching Application .

SNN4010D Features

* Drain-source breakdown voltage: BVDSS=100V
* Low gate charge device
* Low drain-source On resistance: RDS(on)=25mΩ (Typ. )
* Advanced trench process technology
* High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D

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Datasheet Details

Part number: SNN4010D
Manufacturer: KODENSHI KOREA
File Size: 308.62 KB
Datasheet: SNN4010D-KODENSHIKOREA.pdf
Description: N-Ch Trench MOSFET

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N-Ch Trench MOSFET KODENSHI KOREA

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