Part number:
2SA812
Manufacturer:
Kexin
File Size:
790.36 KB
Description:
Pnp transistors.
* High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absol
2SA812
Kexin
790.36 KB
Pnp transistors.
📁 Related Datasheet
2SA811A - PNP SILICON TRANSISTOR
(NEC)
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2SA812 - PNP Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE =.
2SA812 - PNP Transistor
(WEITRON)
PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Vo.
2SA812 - SOT-23 BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25O.
2SA812 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812.
2SA812 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES z Complementary to 2SC1623.
2SA812 - PNP Transistor
(DC COMPONENTS)
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA812
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio.
2SA812 - Silicon Epitaxial Planar Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Commplementary to 2SC1623. z High DC current gain:hFE=200typ.
(VCE=-6.0V,IC=.
