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2SB1114 - Transistor

Datasheet Summary

Features

  • World standard miniature package. High DC current gain hFE=135 to 600. Low VCE(sat): VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current (pulse).
  • Total power dissipation Junction temperature Storage temperature range.
  • Pulsed: PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -20 -20 -6 -2 -3 2 150 -55 to +150 Unit V V V A A W Electrical.

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Datasheet Details

Part number 2SB1114
Manufacturer Kexin
File Size 68.31 KB
Description Transistor
Datasheet download datasheet 2SB1114 Datasheet
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Full PDF Text Transcription

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SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Transistors Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE(sat): VCE(sat)=-0.3V at 1.
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