2SB1302 - PNP Epitaxial Planar Silicon Transistors
2SB1302 Features
* Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emi
