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2SB1001 - Silicon PNP Transistor

Datasheet Summary

Features

  • Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature.
  • 1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP.
  • 1 PC.
  • 2 Tj Tstg Rating -20 -16 -6 -2 -3 1 150 -55 to +150 Unit V V V A A W.
  • 2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta =.

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Datasheet Details

Part number 2SB1001
Manufacturer Kexin
File Size 67.84 KB
Description Silicon PNP Transistor
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SMD Type Silicon PNP Epitaxial 2SB1001 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP *1 PC *2 Tj Tstg Rating -20 -16 -6 -2 -3 1 150 -55 to +150 Unit V V V A A W *2. Value on the alumina ceramic board (12.5 X 20 X 0.
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