2SB1628
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Pnp silicon epitaxial transistor.
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2SB1622 - Power Transistor
(Sanken)
Power Transistor 2SB1622
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
–200
V
VCEO
–200
V
VEBO
–5
V
IC
–15
A
IB
–1
A
.
2SB1623 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1623
Silicon PNP epitaxial planer type
Unit: mm
For power amplification
9.9±0.3
4.6±0.2 2.9±0.2
• High forward current transf.
2SB1623A - Silicon PNP epitaxial planar type Transistor
(Panasonic)
Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
• High for.
2SB1624 - Silicon PNP Transistor
(Sanken electric)
(7 0 Ω ) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1624 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 to +1.
2SB1624 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1624
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Mi.
2SB1624 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Darlington Power Transistors
2SB1624
DESCRIPTION ·With TO-3PN package.
2SB1625 - Silicon PNP Transistor
(Sanken electric)
(7 0 Ω ) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1625 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 to +150 (Ta=25°.
2SB1625 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Vol.
2SB1625 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Darlington Power Transistors
2SB1625
DESCRIPTION ·With TO-3PML packag.
2SB1626 - Silicon PNP Transistor
(Sanken electric)
(7 0 Ω ) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 –110 –110 –5 –6 –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°.
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