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BCV62 - PNP general purpose double transistor

Key Features

  • s.
  • High current gain.
  • Low collector-emitter saturation voltage 21 TR1 TR2 34 Unit: mm 1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Thermal resistance from junction to ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj, TSTG Rating -30 -30 -6 -100 250 500 -55 to +150 Unit V V V mA mW ℃/W ℃ www. kexin. com. cn 1 SMD Type MOSFET BCV62.

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SMD Type MOSFET PNP general purpose double transistor BCV62 ■ Features ● High current gain ● Low collector-emitter saturation voltage 21 TR1 TR2 34 Unit: mm 1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Thermal resistance from junction to ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj, TSTG Rating -30 -30 -6 -100 250 500 -55 to +150 Unit V V V mA mW ℃/W ℃ www.kexin.com.