APTB1612SURKQWDF
Kingbright
299.89kb
Bi-color smd chip led lamp. The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode The source color devices are made wi
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APTB1612ESGC - SMD CHIP LED LAMP
(Kingbright Corporation)
1.6x1.25mm BI-COLOR SMD CHIP LED LAMP
APTB1612ESGC
HIGH EFFICIENCY RED SUPER BRIGHT GREEN
Features
1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. BI-COLOR.
APT05DC120HJ - SiC Diode Full Bridge Power Module
(Microsemi)
APT05DC120HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 1200V IC = 5A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Ind.
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APT1001R1AVR - MOSFET
(Advanced Power Technology)
APT1001R1AVR
1000V 9A 1.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.
APT1001R1BN - MOSFET
(Advanced Power Technology)
D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
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Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1.
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APT1001R1BVFR
1000V 11A 1.100Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.
APT1001R1HVR - MOSFET
(Advanced Power Technology)
APT1001R1HVR
1000V 9A 1.100Ω
POWER MOS V ®
TO-258
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t.
APT1001R3BN - MOSFET
(Advanced Power Technology)
D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
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Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1.
APT1001R6BFLL - POWER MOS 7 R FREDFET
(Advanced Power Technology)
Typical Performance Curves
APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL
1000V
8A 1.60Ω
D3PAK
POWER MOS 7
®
R
FREDFET
TO-247
Power MOS 7 is a .
APT1001R6BN - MOSFET
(Advanced Power Technology)
D
TO-247
G S
APT1001R6BN 1000V 8.0A 1.60Ω
®
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MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT10.