APTR3216SEC Datasheet, Led, Kingbright

APTR3216SEC Features

• Led 3.2mmx1.6mm SMT LED,1.05mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. IDEAL FOR BACKLIGHT AND INDICATOR. VAVRIOUS COLORS AND LENS TYPES AVAILABLE. PACKAGE : 2000PCS / REEL. R

PDF File Details

Part number:

APTR3216SEC

Manufacturer:

Kingbright

File Size:

129.56kb

Download:

📄 Datasheet

Description:

Smd led. The Super Bright Orange devices is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Package Dimensions Notes: 1.

TAGS

APTR3216SEC

Kingbright

📁 Related Datasheet

APTR3216SYC - SMD CHIP LED LAMP (Kingbright Corporation)
3.2x1.6mm SMD CHIP LED LAMP APTR3216SYC SUPER BRIGHT YELLOW Features 3.2mmx1.6mm SMT LED,1.05mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGL.

APTR3216SYCK - SMD LED (Kingbright)
APTR3216SYCK 3.2 x 1.6 mm SMD Chip LED Lamp DESCRIPTIONS The Super Bright Yellow device is made with AlGaInP (on GaAs substrate) light emitting diode .

APTR3216MGC - SMD LED (Kingbright)
ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features z 3.2mmx1.6mm SMD LED,1.05mm thickness. z Low power cons.

APTR3216QWF-D - SMD Chip LED Lamp (Kingbright)
APTR3216QWF/D 3.2 x 1.6 mm SMD Chip LED Lamp DESCRIPTIONS The source color devices are made with InGaN Light Emitting Diode Electrostatic discharge an.

APTR3216QWF-G - SMD LED (Kingbright)
ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features z 3.2mmx1.6mm SMT LED,1.05mm thickness. z Low power cons.

APT05DC120HJ - SiC Diode Full Bridge Power Module (Microsemi)
APT05DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 5A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Ind.

APT06DC60HJ - SiC Diode Full Bridge Power Module (Microsemi)
APT06DC60HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induc.

APT1001R1AVR - MOSFET (Advanced Power Technology)
APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.

APT1001R1BN - MOSFET (Advanced Power Technology)
D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.

APT1001R1BVFR - MOSFET (Advanced Power Technology)
APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.