Part number:
2SB1366
Manufacturer:
Korea Electronics
File Size:
503.33 KB
Description:
Transistor.
.
2SB1366
Korea Electronics
503.33 KB
Transistor.
.
📁 Related Datasheet
2SB1361 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD2052
Unit: mm
q
q q q
16.2±0.5.
2SB1361 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1361
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp.
2SB1361 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1361
DESCRIPTION ·With TO-3PFa package ·Compleme.
2SB1362 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1362
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Comp.
2SB1362 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1362
DESCRIPTION ·With TO-3PN package ·Wide area.
2SB1366 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC.
2SB1366 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1366
DESCRIPTION ·With TO-220F package ·Compleme.
2SB1367 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC.
