2SC3876
Korea Electronics
333.83kb
(2scxxxx) transistor.
TAGS
📁 Related Datasheet
2SC3870 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3870 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3870
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
4.2±.
2SC3870 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package ·High breakdown vo.
2SC3871 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3871 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
4.2±.
2SC3872 - Silicon NPN triple diffusion planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3872
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
q q q q
16.2±0.5 12.5 3.
2SC3873 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area o.
2SC3873 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3873
DESCRIPTION ·With TO-3PFa package ·High VCB.
2SC3874 - Silicon NPN Transistor
(Panasonic Semiconductor)
..
Power Transistors
2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
Uni.
2SC3874 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3874
DESCRIPTION ·With TO-3PL package ·High spee.
