2SC3876
Korea Electronics
333.83 KB
(2scxxxx) transistor.
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📁 Related Datasheet
2SC3870 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3870 - Silicon NPN Transistor
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For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
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2SC3870 - SILICON POWER TRANSISTOR
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2SC3871 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3871 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
10.0±0.2
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2SC3872 - Silicon NPN triple diffusion planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3872
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For high breakdown voltage high-speed switching
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q q q q
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2SC3873 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area o.
2SC3873 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
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2SC3873
DESCRIPTION ·With TO-3PFa package ·High VCB.
