* 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°
2SC3872
Panasonic Semiconductor
66.49 KB
Silicon npn triple diffusion planar type transistor.
Power Transistors
2SC3872
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
q q q q
16.2±0.5 12.5 3.
📁 Related Datasheet
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DESCRIPTION ·Collector-Base Breakdown Voltage-
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2SC3870 - Silicon NPN Transistor
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For high breakdown voltage high-speed switching
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2SC3874 - Silicon NPN Transistor
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For high breakdown voltage high-speed switching
20.0±0.5
Uni.
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