Datasheet Details
- Part number
- 2SC3871
- Manufacturer
- Inchange Semiconductor
- File Size
- 211.70 KB
- Datasheet
- 2SC3871_InchangeSemiconductor.pdf
- Description
- Power Transistor
2SC3871 Description
isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.
Low Collector Saturation Voltage.
Wide Area of Safe Operation.
High Speed S.
2SC3871 Applications
* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Con
📁 Related Datasheet
📌 All Tags