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2SC3871 Datasheet - Inchange Semiconductor

2SC3871 Power Transistor

*Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) *Low Collector Saturation Voltage *Wide Area of Safe Operation *High Speed Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high speed switching a.

2SC3871_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC3871

Manufacturer:

Inchange Semiconductor

File Size:

211.70 KB

Description:

Power transistor.

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2SC3871 2SC3871 Power Transistor Inchange Semiconductor

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