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2SC3871 - Power Transistor

2SC3871 Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min. Low Collector Saturation Voltage. Wide Area of Safe Operation. High Speed S.

2SC3871 Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

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Power Transistor Inchange Semiconductor
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