2SC3871 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min. Low Collector Saturation Voltage. Wide Area of Safe Operation. High Speed S.

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Datasheet Specifications

Part number: 2SC3871
Manufacturer: Inchange Semiconductor
File Size: 211.70 KB
Datasheet: 2SC3871_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

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Power Transistor Inchange Semiconductor

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