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2SC3856-P - Silicon NPN Transistor

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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) Good Linearity of hFE APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage

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Part number 2SC3856-P
Manufacturer Inchange Semiconductor
File Size 581.72 KB
Description Silicon NPN Transistor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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