2SC3856-P - Silicon NPN Transistor
*High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) *Good Linearity of hFE APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage
