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2SC3856-P Datasheet - Inchange Semiconductor

2SC3856-P Silicon NPN Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) *Good Linearity of hFE APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage.

2SC3856-P-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC3856-P

Manufacturer:

Inchange Semiconductor

File Size:

581.72 KB

Description:

Silicon npn transistor.

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2SC3856-P 2SC3856-P Silicon NPN Transistor Inchange Semiconductor

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