2SC3834Y Silicon NPN Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3834Y .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Good Linearit.

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Datasheet Specifications

Part number: 2SC3834Y
Manufacturer: Inchange Semiconductor
File Size: 587.82 KB
Datasheet: 2SC3834Y-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 7 A

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2SC3834Y Silicon NPN Transistor Inchange Semiconductor

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