2SC3852A Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). DC Current Gain- : hFE= 200(Min)@ IC= 0. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 2SC3852A
Manufacturer: Inchange Semiconductor
File Size: 206.31 KB
Datasheet: 2SC3852A-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3

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Silicon NPN Power Transistor Inchange Semiconductor

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