2SC3875
Elite
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Npn epitaxial silicon transistor.
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2SC3870 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of.
2SC3870 - Silicon NPN Transistor
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2SC3870
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For high breakdown voltage high-speed switching
Unit: mm
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2SC3871 - Power Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
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2SC3871 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
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2SC3872 - Silicon NPN triple diffusion planar type Transistor
(Panasonic Semiconductor)
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2SC3872
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For high breakdown voltage high-speed switching
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2SC3873 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
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2SC3873 - SILICON POWER TRANSISTOR
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2SC3874 - Silicon NPN Transistor
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2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
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