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KRC281M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

KRC281M Description

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.AUDIO MUTING APPLICATION..

KRC281M Features

* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANS

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Datasheet Details

Part number
KRC281M
Manufacturer
Korea Electronics
File Size
380.84 KB
Datasheet
KRC281M_KoreaElectronics.pdf
Description
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

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KRC281M KRC286M EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics
Korea Electronics KRC281M-like datasheet