KRC284M Datasheet, Transistor, Korea Electronics

✔ KRC284M Features

High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resisto

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KRC284M

Korea Electronics

380.84 KB

(krc281m - krc286m) epitaxial planar npn transistor.

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