KRC282S Features
* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B KRC281S~KRC286S EPIT
Datasheet Details
KRC282S, KRC281S
Korea Electronics
343.90 KB
Epitaxial planar npn transistor.
This datasheet PDF includes multiple part numbers: KRC282S, KRC281S.
Please refer to the document for exact specifications by model.
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KRC282S Distributor
